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MTN2310M3 - N-Channel Enhancement Mode MOSFET

Key Features

  • VDS=60V RDS(ON)=90mΩ(max. )@VGS=10V, IDS=3A RDS(ON)=120mΩ(max. )@VGS=4.5V, IDS=2A.
  • Simple drive requirement.
  • Small package outline Symbol MTN2310M3 Outline SOT-89 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C (Note 3) Continuous Drain Current @ TA=70°C (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ Linear Derating Factor Operating Junctio.

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Datasheet Details

Part number MTN2310M3
Manufacturer CYStech
File Size 445.50 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTN2310M3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. 60V N-CHANNEL Enhancement Mode MOSFET MTN2310M3 Spec. No. : C393M3 Issued Date : 2007.05.28 Revised Date : Page No. : 1/6 Features • VDS=60V RDS(ON)=90mΩ(max.)@VGS=10V, IDS=3A RDS(ON)=120mΩ(max.)@VGS=4.5V, IDS=2A • Simple drive requirement • Small package outline Symbol MTN2310M3 Outline SOT-89 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C (Note 3) Continuous Drain Current @ TA=70°C (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ Linear Derating Factor Operating Junction Temperature Storage Temperature Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3.