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NX6350GP - LASER DIODE

Datasheet Summary

Description

The NX6350GP series is a 1 270/1 290/1 310/1 330 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

Features

  • Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 8.5 mW Ith = 8 mA η d = 0.35 W/A TC =.
  • 5 to +85° C φ 5.6 mm 7.5 mm R08DS0065EJ0100 Rev.1.00 Jul 05, 2012 Page 1 of 5 A Business Partner of Renesas Electronics Corporation. NX6350GP Series Chapter Title.

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Datasheet Details

Part number NX6350GP
Manufacturer California Eastern Labs
File Size 903.69 KB
Description LASER DIODE
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A Business Partner of Renesas Electronics Corporation. NX6350GP Series FOR 40GBASE-LR4 & 10 Gb/s E-PON ONU APPLICATION DESCRIPTION The NX6350GP series is a 1 270/1 290/1 310/1 330 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. Data Sheet R08DS0065EJ0100 Rev.1.00 Jul 05, 2012 LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE APPLICATIONS • • • 40GBASE-LR4 10 Gb/s E-PON ONU Bi-Directional 10G SFP+ (CPRI,10G-Ethernet) FEATURES • • • • • • • Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 8.5 mW Ith = 8 mA η d = 0.35 W/A TC = −5 to +85° C φ 5.6 mm 7.5 mm R08DS0065EJ0100 Rev.1.
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