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NX6353EP - LASER DIODE

General Description

The NX6353EP series is a 1 270/1 290/1 310/1 330/1 350 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

9.8 Gbps CPRI 10G Ethernet

Key Features

  • Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 8.5 mW Ith = 7 mA ηd = 0.35 W/A TC =.
  • 40 to +85°C φ 5.6 mm 6.2 mm R08DS0089EJ0100 Rev.1.00 Feb 25, 2013 Page 1 of 5 A Business Partner of Renesas Electronics Corporation. NX6353EP Series Chapter Title.

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Datasheet Details

Part number NX6353EP
Manufacturer California Eastern Labs
File Size 714.39 KB
Description LASER DIODE
Datasheet download datasheet NX6353EP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A Business Partner of Renesas Electronics Corporation. Preliminary NX6353EP Series LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION Data Sheet R08DS0089EJ0100 Rev.1.00 Feb 25, 2013 DESCRIPTION The NX6353EP series is a 1 270/1 290/1 310/1 330/1 350 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATIONS • 9.8 Gbps CPRI • 10G Ethernet FEATURES • • • • • • • Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 8.5 mW Ith = 7 mA ηd = 0.35 W/A TC = −40 to +85°C φ 5.6 mm 6.2 mm R08DS0089EJ0100 Rev.1.