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N-Channel Enhancement Mode MOSFET Switch
CORPORATION
3N170 / 3N171
FEATURES HANDLING PRECAUTIONS MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device while wiring, testing, or in actual operation, follow the procedures outlined below. 1. To avoid the build-up of static charge, the leads of the devices should remain shorted together with a metal ring except when being tested or used. 2. Avoid unnecessary handling. Pick up devices by the case instead of the leads.
TO-72
• Low Switching Voltages • Fast Switching Times Drain-Source Resistance • Low • Low Reverse Transfer Capacitance
PIN CONFIGURATION
3.
3N170 Datasheet
