| Part Number | 3N170 Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview | . . |
3N170 Datasheet and Specifications PDF
The 3N170 is a (3N169 - 3N171) MOSFETs Switching.
| Part Number | 3N170 Datasheet |
|---|---|
| Description | High Speed Switch |
| Manufacturer | Micross |
| Overview | 3N170 N-CHANNEL MOSFET The 3N170 is an enhancement mode N-Channel Mosfet The 3N170 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically s. DIRECT REPLACEMENT FOR INTERSIL 3N170 LOW DRAIN TO SOURCE RESISTANCE FAST SWITCHING ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) rDS(on) ≤ 200Ω td(on) ≤ 3.0ns Maximum Temperatures Storage Temperature Operating Junction Temperature 3N170 Features: Maximum Power Dissipation C. |
| Part Number | 3N170 Datasheet |
|---|---|
| Description | N-Channel Enhancement Mode MOSFET Switch |
| Manufacturer | Calogic LLC |
| Overview | N-Channel Enhancement Mode MOSFET Switch CORPORATION 3N170 / 3N171 FEATURES HANDLING PRECAUTIONS MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulati. HANDLING PRECAUTIONS MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device while wiring, testing, or in actual operation, follow the procedures outlined below. 1. To avoid the build-up . |
| Part Number | 3N170 Datasheet |
|---|---|
| Description | N-CHANNEL MOSFET ENHANCEMENT MODE |
| Manufacturer | Linear Technology |
| Overview | 3N170 3N171 Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE FAST SWITCHING ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Ma. Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE FAST SWITCHING ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Current Drain . |