3N170 - N-CHANNEL MOSFET ENHANCEMENT MODE

Linear Technology (now Analog Devices)

Key Features

Direct Replacement for.

3N170 n-channel mosfet enhancement mode by Linear Technology (now Analog Devices) - Datasheet Preview

Datasheet Details

Part number	3N170
Manufacturer	Linear Technology (now Analog Devices)
File Size	210.37 KB
Description	N-CHANNEL MOSFET ENHANCEMENT MODE
Datasheet	3N170 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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3N170 3N171 Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE FAST SWITCHING ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Current Drain to Source Maximum Voltages Drain to Gate Drain to Source Gate to Source ±35V 25V ±35V 30mA * Body tied to Case. 300mW -65 to +150 °C -55 to +135 °C 1 N-CHANNEL MOSFET ENHANCEMENT MODE rds(on) ≤ 200Ω td(on) ≤ 3.