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2N5058 Datasheet NPN Silicon Transistor

Manufacturer: Central Semiconductor

Overview: 2N5058 2N5059 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i .

General Description

: The CENTRAL SEMICONDUCTOR 2N5058 and 2N5059 are silicon NPN epitaxial planar transistors designed for high voltage general purpose amplifier applications.

MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg JA JC 2N5058 300 2N5059 250 300 250 7.0 6.0 150 1.0 5.0 -65 to +200 150 30 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5058 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=100V - 50 ICBO VCB=100V, TA=125°C - 20 IEBO VEB=5.0V - 10 BVCBO IC=100μA 300 - BVCEO IC=30mA 300 - BVEBO IE=100μA 7.0 - VCE(SAT) IC=30mA, IB=3.0mA - 1.0 VBE(SAT) IC=30mA, IB=3.0mA - 0.85 VBE(ON) VCE=25V, IC=30mA - 0.82 hFE VCE=25V, IC=5.0mA 10 - hFE VCE=25V, IC=30mA 35 150 hFE VCE=25V, IC=30mA, TA=-55°C 10 - hFE VCE=25V, IC=100mA 35 - fT VCE=25V, IC=10mA, f=20MHz 30 160 Cob VCB=10V, IE=0, f=1.0MHz - 10 Cib VEB=0.5V, IC=0, f=1.0MHz - 75 2N5059 MIN MAX - 50 - 20 - 10 250 250 6.0 - 1.0 - 0.85 - 0.82 - 10 30 150 -30 30 160 - 10 - 75 UNITS V V V mA W W °C °C/W °C/W UNITS nA μA nA V V V V V V MHz pF pF R1 (27-March 2015) 2N5058 2N5059 SILICON NPN TRANSISTORS TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER w w w.

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