BAS28 Datasheet | Central Semiconductor

DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS28 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an epoxy molded SOT-143 surface mount case. This device is designed for high speed switching applications. MARKING CODE: A61 or JTW SOT-143 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0ms Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IF IFRM IFSM IFSM IFSM PD TJ, Tstg ΘJA 75 85 250 500 4.0 2.0 1.0 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS VR=25V, TA=150°C VR=75V VR=75V, TA=150°C IF=1.0m A IF=10m A IF=50m A IF=150m A VR=0, f=1.0MHz 2.0 trr IF=IR=10m A, Irr=1.0m A, RL=100Ω Qs IF=10m A, VR=5.0V, RL=500Ω IF=10m A, tr=20ns UNITS V V m A m A A A A m W °C °C/W UNITS μA μA μA m V m V V V p F ns p C V R8 (19-September 2018) BAS28 SURFACE MOUNT SILICON DUAL, ISOLATED HIGH SPEED SWITCHING DIODES SOT-143 CASE - MECHANICAL...