Datasheet Details
| Part number | BCV47 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 100.05 KB |
| Description | NPN SILICON DARLINGTON TRANSISTOR |
| Datasheet | BCV47_CentralSemiconductorCorp.pdf |
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Overview: BCV47 NPN SILICON DARLINGTON TRANSISTOR Central TM Semiconductor Corp.
| Part number | BCV47 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 100.05 KB |
| Description | NPN SILICON DARLINGTON TRANSISTOR |
| Datasheet | BCV47_CentralSemiconductorCorp.pdf |
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: The CENTRAL SEMICONDUCTOR BCV47 type is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain.
Marking Code is FG.
SOT-23 CASE MAXIMUM RATINGS (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ,Tstg ΘJA -65 to +150 357 °C °C/W SYMBOL VCBO VCEO VEBO IC ICM IB PD 80 60 10 500 800 100 350 UNITS V V V mA mA mA mW ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO IEBO BVCEO BVCBO BVEBO VCE(SAT) VBE(SAT) hFE hFE hFE fT VCB=30V VBE=10V IC=10mA IC=10µA IE=100nA IC=100mA, IB = 0.1mA IC=100mA, IB = 0.1mA VCE=5.0V, IC = 1.0mA VCE=5.0V, IC = 10mA VCE=5.0V, IC = 100mA VCE=5.0V, IC = 30mA, f=100MHz 60 80 10 TYP MAX 100 100 UNITS nA nA V V V 1.0 1.5 2,000 4,000 10,000 220 V V MHz R0 ( 07-December 2001) Central TM BCV47 NPN SILICON DARLINGTON TRANSISTOR Semiconductor Corp.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BCV47 | NPN Darlington transistors | NXP |
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BCV47 | NPN Silicon Darlington Transistors | Infineon Technologies AG |
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BCV47 | NPN Transistor | JCST |
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BCV47 | NPN DARLINGTON TRANSISTOR | Diodes |
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BCV47 | NPN Darlington Transistors | SEMTECH |
| Part Number | Description |
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