DESCRIPTION
: The CENTRAL SEMICONDUCTOR MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS
: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCER Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation (TC=25°C) PD Power Dissipation PD Operating and Storage Junction Temperature TJ, Tstg 75 50 7.0 500 3.0 0.8 -65 to +200 ELECTRICAL CHARACTERISTICS
: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=60V IEBO VEB=5.0V BVCBO IC=100μA 75 BVCER IC=10mA, RBE=10Ω 50 BVEBO IE=100μA 7.0 VCE(SAT) IC=150mA, IB=15mA VBE(SAT) IC=150mA, IB=15mA hFE VCE=10V, IC=100μA 20 hFE VCE=10V, IC=10mA 35 hFE VCE=10V, IC=150mA 40 hFE VCE=10V, IC=500mA 20 fT VCE=10V, IC=50mA, f=20MHz 60 Cob VCB=1
Central Semiconductor
