Central Semiconductor BAS56
The CENTRAL SEMICONDUCTOR BAS56 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an epoxy molded surface mount SOT-143 case. This device is designed for high speed switching applications.- Max Operating Temp : 150°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | BAS56 |
|---|---|
| Datasheet | BAS56 Download |
| Manufacturer |  Central Semiconductor |
| Description | DUAL HIGH CURRENT SWITCHING DIODE |
| Buy | Stock & Price |
DESCRIPTION
: MARKING CODE: L51 or WL5 SOT-143 CASEMAXIMUM RATINGS
: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IF IFRM IFSM IFSM PD TJ, Tstg ΘJA 60 60 200 400 4.0 1.0 350 -65 to +150 357ELECTRICAL CHARACTERISTICS
PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR VR=60V 100 IR VR=60V, TA=150°C 100 IR VR=75V 10 VF IF=10mA 0.75 VF IF=200mA 1.0 VF IF=500mA 1.25 CJ VR=0, f=1.0MHz 2.5 trr IF=IR=400mA, Irr=40mA, RL=100Ω 6.0 Qs IF=10mA, VR=5.0V, RL=500Ω 50 VFR IF=400mA, tr=30ns 1.2 VFR IF=400mA, tr=100ns 1.5 UNITS V V mA mA A A mW °C °C/W UNITS nA μA μA V V V pF ns pC V V R8 (19-September 2018) BAS56 SURFACE MOUNT SILICON DUAL, ISOLATED HIGH CURRENT SWITCHING DIODES SOT-143 CASE - MECHANICAL OUTLINE PIN CONFIGURATION...
