BC858C Datasheet | Central Semiconductor

BC856 SERIES BC857 SERIES BC858 SERIES SURFACE MOUNT SILICON PNP TRANSISTOR SOT-23 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856, BC857 and BC858 Series devices are silicon PNP transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE Note: Reverse Lead Codes Available, Add “R” to the end of the Part # and Marking Code. MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IBM PD TJ, Tstg ΘJA BC858 30 30 BC857 50 45 5.0 100 200 200 330 -55 to +150 375 BC856 80 65 UNITS V V V m A m A m A m W °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS ICBO VCB=30V ICBO VCB=30V, TA=150°C IEBO VEB=5.0V BVCBO IC=10µA (BC856) BVCBO IC=10µA (BC857) BVCBO IC=10µA (BC858) BVCEO IC=10m A...