CMOSH-4E Datasheet | Central Semiconductor

DESCRIPTION : The CENTRAL SEMICONDUCTOR CMOSH-4E is an Enhanced version of the CMOSH-3 Silicon Schottky Diode in an SOD-523 Surface Mount Package. MARKING CODE: 4E ENHANCED SPECIFICATIONS: - IF from 100m A max to 200m A max. SOD-523 CASE - - BVR from 30V min to 40Vmin. VF from 1.0V max to 0.8V max. - Peak Repetitive Reverse Voltage - Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS: (TA=25°C) SYMBOL VRRM IF IFRM IFSM PD TJ, Tstg ΘJA 40 200 350 750 250 -65 to +150 500 UNITS V m A m A m A m W °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IR VR=25V 90 IR VR=25V, TA=100°C 25 IR=100µA 40 50 - BVR VF IF=2.0m A 0.29 IF=15m A 0.37 - VF IF=100m A 0.61 - VF - - VF IF=200m A 0.65 CT VR=1.0V, f=1.0MHz 7.0 trr IF=IR=10m A, Irr=1.0m A, RL=100Ω MAX 500 100 0.33 0.42 0.80 1.0 5.0 UNITS n A μA V V V V V p F ns - - - Enhanced specification. Additional Enhanced specification. R2 (25-January 2010) .. CMOSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE SOD-523 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode MARKING CODE: 4E R2 (25-January 2010) w w w. c e n t r a l s e m i . c o...