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PROCESS
Small Signal Transistor
CP318V
NPN - High Voltage Transistor Chip
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 25,536 PRINCIPAL DEVICE TYPES MPS455 EPITAXIAL PLANAR 26 x 26 MILS 7.1 MILS ± 0.6 MILS 5.5 x 5.5 MILS 5.5 x 5.5 MILS Al-Si - 17,000Å Au - 12,000Å
BACKSIDE COLLECTOR
R2 (22-March 2010)
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PROCESS
CP318V
Typical Electrical Characteristics
R2 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
www.DataSheet4U.