Datasheet4U Logo Datasheet4U.com

CP336V - Small Signal Transistor

📥 Download Datasheet

Datasheet preview – CP336V

Datasheet Details

Part number CP336V
Manufacturer Central Semiconductor
File Size 746.06 KB
Description Small Signal Transistor
Datasheet download datasheet CP336V Datasheet
Additional preview pages of the CP336V datasheet.

📁 Similar Datasheet

  • CP300 - SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes) (Pan Jit International Inc.)
  • CP300 - SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A (TRSYS)
  • CP301 - SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes) (Pan Jit International Inc.)
  • CP301 - SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A (TRSYS)
  • CP3010 - SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes) (Pan Jit International Inc.)
  • CP3010 - SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A (TRSYS)
  • CP302 - SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes) (Pan Jit International Inc.)
  • CP302 - SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A (TRSYS)
  • CP3020-7R - 120...195 Watt DC-DC Converters (Power-One)
  • CP304 - SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes) (Pan Jit International Inc.)
Other Datasheets by Central Semiconductor
  • CP337V - Small Signal Transistor
  • CP302-MPSH10 - NPN - RF Transistor Die
  • CP305 - Small Signal Transistor NPN - High Current Transistor Chip
  • CP305V-BCW66H - NPN Transistor
  • CP307 - Small Signal Transistor NPN - Silicon Darlington Transistor Chip
  • CP309 - Power Transistor NPN - Low Saturation Transistor Chip
  • CP310 - Small Signal Transistor NPN - High Voltage Transistor Chip
  • CP312 - Power Transistor NPN - Amp/Switch Transistor Chip

Full PDF Text Transcription

Click to expand full text
PROCESS Small Signal Transistor CP336V NPN - High Voltage Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 57,735 PRINCIPAL DEVICE TYPES CMPT5551 CTLT5551-M832D CXT5551 CZT5551 CZT5551E EPITAXIAL PLANAR 17.3 x 17.3 MILS 7.1 MILS 3.9 x 3.9 MILS 3.9 x 3.9 MILS Al-Si - 30,000Å Au - 12,000Å R1 (26-October 2010) w w w. c e n t r a l s e m i . c o m www.DataSheet4U.com PROCESS CP336V Typical Electrical Characteristics R1 (26-October 2010) w w w. c e n t r a l s e m i . c o m www.DataSheet4U.
Published: |