Note: Below is a high-fidelity text extraction (approx. 800 characters) for
CP611. For precise diagrams, and layout, please refer to the original PDF.
PROCESS Power Transistor CP611 PNP - Amp/Switch Transistor Chip www.DataSheet4U.com PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding P...
View more extracted text
Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 1,300 PRINCIPAL DEVICE TYPES CJD42C TIP42C EPITAXIAL PLANAR 80 x 99 MILS 12.5 ± 1 MILS 12 x 32 MILS 13 x 46 MILS Al - 30,000Å Ag - 16,000Å BACKSIDE COLLECTOR R5 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP611 Typical Electrical Characteristics R5 (22-March 2010) w w w. c e n t r a l s e m i .
CP611 Datasheet
