CP645 - Power Transistor PNP

Central Semiconductor

Datasheet Details

Part number	CP645
Manufacturer	Central Semiconductor
File Size	61.64 KB
Description	Power Transistor PNP
Datasheet	CP645 Datasheet
Additional preview pages of the CP645 datasheet.

📁 Similar Datasheet

CP643 - Silicon Epitaxial Junction N-Channel Field Effect Transistor (Crystalonics)
CP600 - SINGLE-PHASE SILICON BRIDGE-P.C. MTG 3A / HEAT-SINK MTG 6A(VOLTAGE 50 to 1000 Volts CURRENT - P.C. MTG 3A / HEAT-SINK MTG 6A) (Pan Jit International Inc.)
CP600 - SINGLE-PHASE SILICON BRIDGE-P.C. MTG 3A/ HEAR-SINK MTG 6A (TRSYS)
CP601 - SINGLE-PHASE SILICON BRIDGE-P.C. MTG 3A / HEAT-SINK MTG 6A(VOLTAGE 50 to 1000 Volts CURRENT - P.C. MTG 3A / HEAT-SINK MTG 6A) (Pan Jit International Inc.)
CP601 - SINGLE-PHASE SILICON BRIDGE-P.C. MTG 3A/ HEAR-SINK MTG 6A (TRSYS)
CP6010 - SINGLE-PHASE SILICON BRIDGE-P.C. MTG 3A / HEAT-SINK MTG 6A(VOLTAGE 50 to 1000 Volts CURRENT - P.C. MTG 3A / HEAT-SINK MTG 6A) (Pan Jit International Inc.)
CP6015 - HP Color LaserJet (HP)
CP6015DE - HP Color LaserJet (HP)
CP6015DN - HP Color LaserJet (HP)
CP6015N - HP Color LaserJet (HP)

Other Datasheets by Central Semiconductor

CP611 - PNP Transistor
CP630 - PNP Transistor

Full PDF Text Transcription

Click to expand full text

PROCESS CP645 Power Transistor PNP, 8.0A Power Transistor Chip Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area www.DataSheet4U.com MULTIEPITAXIAL MESA 120 x 145 MILS 13 MILS 20 x 45 MILS 14 x 70 MILS Al - 50,000Å Cr / Ni / Ag - 10,000Å Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 640 PRINCIPAL DEVICE TYPES MJE15031 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.

Published: May 6, 2008 |