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PROCESS
Small Signal MOSFET
CP761R
P-Channel Enhancement-Mode MOSFET Chip
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PROCESS DETAILS Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization 14.2 x 14.2 MILS 3.9 MILS 3.94 x 3.94 MILS 3.94 x 7.08 MILS Al-Si - 35,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 6 INCH WAFER 123,000 PRINCIPAL DEVICE TYPES CEDM8001 CMNDM8001
R1 (2-September 2010)
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PROCESS
CP761R
Typical Electrical Characteristics
R1 (2-September 2010)
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CP761R Datasheet
