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PROCESS
Small Signal Transistor
CP767
PNP- Saturated Switch Transistor Chip
PRELIMINARY
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 12,300 PRINCIPAL DEVICE TYPES 2N3467 2N3468 EPITAXIAL PLANAR 30 x 30 MILS 9.0 MILS 3.85 x 4.20 MILS 7.35 x 3.75 MILS Al - 30,000Å Au - 15,000Å
BACKSIDE COLLECTOR
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