CP764X Datasheet | Central Semiconductor

PROCESS Small Signal MOSFET Transistor P-Channel Enhancement-Mode Transistor Chip .. PROCESS DETAILS Process Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 6 INCH WAFER 62,600 PRINCIPAL DEVICE TYPES CMLDM8002A CMPDM8002A CTLDM8002A-M621 EPITAXIAL PLANAR 21.7 x 17.7 MILS 5.5 MILS 4.7 x 4.7 MILS 6.1 x 7.9 MILS Al-Si - 35,000Å Au - 12,000Å R1 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS Typical Electrical Characteristics R1 (22-March 2010) w w w. c e n t r a l s e m i . c o...