CP792V Datasheet | Central Semiconductor

PROCESS Smal Signal Transistor - Amp/Switch Transistor Chip .. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 93,826 PRINCIPAL DEVICE TYPES 2N3906 CMKT3906 CMLT3906E CMPT3906 CMPT3906E CMST3906 CXT3906 CZT3906 R0 EPITAXIAL PLANAR 11 x 11 MILS 7.1 MILS 3.7 x 3.7 MILS 3.7 x 3.7 MILS Al - 30,000Å Au - 18,000Å BACKSIDE COLLECTOR R2 (13-May 2010) w w w. c e n t r a l s e m i . c o m PROCESS Typical Electrical Characteristics R2 (13-May 2010) w w w. c e n t r a l s e m i . c o...