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PROCESS
Small Signal MOSFET Transistor
P - Channel Enhancement-Mode Transistor Chip
CP794R
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PROCESS DETAILS Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization 15.7 x 15.7 MILS 3.9 MILS 3.9 x 3.9 MILS 9.1 x 8.1 MILS Al-Si - 35,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 6 INCH WAFER 95,400 PRINCIPAL DEVICE TYPES CEDM8004 CMLM0584 CMLDM7484
R0 (29-July 2010)
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PROCESS
CP794R
Typical Electrical Characteristics
R0 (29-July 2010)
w w w. c e n t r a l s e m i .
CP794R Datasheet
