CTLT3410-M621 Datasheet | Central Semiconductor

.Data Sheet.co.kr CTLT3410-M621 (NPN) CTLT7410-M621 (PNP) SURFACE MOUNT PLEMENTARY LOW VCE(SAT) SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT3410-M621 and CTLT7410-M621 are Low VCE(SAT) transistors in a very small leadless 1x2mm surface mount package, designed for applications where small size, operational efficiency, and low energy consumption are prime requirements. Due to the leadless package design, these devices are capable of dissipating up to 3 times the power of similar devices in parable sized surface mount packages. MARKING CODES: CTLT3410-M621: CB CTLT7410-M621: CD Features : - - - - - High Operational Efficiency High Power to Footprint Ratio VCE(SAT) @ 1.0A = 250m V TYP High Collector Current Small TLM621 1x2mm Package SYMBOL VCBO VCEO VEBO IC ICM PD TJ, Tstg ΘJA UNITS V V V A A W °C °C/W TLM621 CASE APPLICATIONS: - - - - DC/DC Converters Switching Circuits LCD Backlighting Battery Powered Portable Equipment MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation (Note 1) Operating and Storage Junction Temperature Thermal Resistance (Note 1) 40 25 6.0 1.0 1.5 0.9 -65 to +150 139 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TYP SYMBOL TEST CONDITIONS MIN PNP NPN ICBO VCB=40V IEBO VEB=6.0V BVCBO IC=100µA 40 BVCEO IC=10m A 25 BVEBO IE=100µA 6.0 VCE(SAT) IC=50m A, IB=5.0m A 20 25 VCE(SAT) IC=100m A, IB=10m A 35 40 VCE(SAT) IC=200m A, IB=20m A 75 80 VCE(SAT) IC=500m A, IB=50m A 130 150 VCE(SAT) IC=800m A, IB=80m A 200 220 VCE(SAT) IC=1.0A, IB=100m A 250 275 Notes (1) FR-4 Epoxy PCB with copper mounting pad area of 33mm2 MAX 100 100 50 75 150 250 400 450 UNITS n A n A V V V m V m V m V m V m V m V R2 (2-December 2010) Datasheet pdf - http://..net/ .Data Sheet.co.kr CTLT3410-M621 (NPN) CTLT7410-M621 (PNP) SURFACE MOUNT PLEMENTARY LOW VCE(SAT) SILICON...