CTLT3820-M563 Datasheet | Central Semiconductor

.Data Sheet.co.kr CTLT3820-M563 SURFACE MOUNT VERY LOW VCE(SAT) NPN SILICON TRANSISTOR Central Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT3820-M563 is a very low VCE(SAT) NPN Transistor packaged in a space saving 1.6 x 1.6mm TLM™ surface mount package. This device is a TLM™ equivalent of the popular CMLT3820G, SOT-563 device, featuring enhanced thermal characteristics, a package footprint patible with standard SOT-563 mounting pad geometries, and a height profile of only 0.4mm. MARKING CODE: CKT Top View Bottom View TLM563 CASE - Device is Halogen Free by design APPLICATIONS: - DC/DC Converters - Voltage Clamping - Protection Circuits - Battery powered Cell Phones, Pagers, Digital Cameras, PDAs, Laptops, etc. MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Features : - High Current (IC=1.0A) - VCE(SAT)=0.28V MAX @ IC=1.0A - Low Profile 0.4mm Package patible with SOT-563 mounting pad geometries. - plementary PNP device CTLT7820-M563 SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJA 80 60 5.0 1.0 2.0 300 500 -65 to +150 250 MAX 100 100 UNITS V V V A A m A m W °C °C/W UNITS n A n A V V V V V V V V ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=60V IEBO VEB=5.0V BVCBO IC=100µA 80 BVCEO IC=10m A 60 BVEBO IE=100µA 5.0 VCE(SAT) IC=100m A, IB=1.0m A VCE(SAT) IC=500m A, IB=50m A VCE(SAT) IC=1.0A, IB=100m A VBE(SAT) IC=1.0A, IB=50m A VBE(ON) VCE=5.0V, IC=1.0A h FE VCE=5.0V, IC=1.0m A 200 h FE VCE=5.0V, IC=500m A 200 h FE VCE=5.0V, IC=1.0A 100 f T VCE=10V, IC=50m A 150 Cob VCB=10V, IE=0, f=1.0MHz 0.115 0.15 0.28 1.1 0.9 MHz p F R0 (24-September 2009) Datasheet pdf - http://..net/ .Data Sheet.co.kr Central CTLT3820-M563 SURFACE MOUNT VERY LOW VCE(SAT) NPN SILICON...