CTLT5551-M832D Datasheet | Central Semiconductor

.Data Sheet.co.kr CTLT5551-M832D SURFACE MOUNT DUAL, HIGH VOLTAGE GENERAL PURPOSE NPN SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT5551-M832D is a Dual NPN General Purpose, High Voltage Amplifier Transistor packaged in the small, thermally efficient, 3x2mm Tiny Leadless Module (TLMTM) surface mount case. These devices are designed for applications where small size, operational efficiency, and low energy consumption are the prime requirements. MARKING CODE: CFS TLM832D CASE - Device is Halogen Free by design Features - Dual High Voltage Transistors (VCBO=180V MAX) - Low Leakage Current (ICBO=50n A MAX @ VCB=120V) - Low VCE(SAT) (0.2V MAX @ IC=50m A) - Small TLM 3x2mm Leadless Surface Mount Package SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA UNITS V V V m A W °C °C/W APPLICATIONS - General purpose high voltage amplifier applications. MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (Note 1) Operating and Storage Junction Temperature Thermal Resistance 180 160 6.0 600 1.65 -65 to +150 76 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=120V 50 ICBO VCB=120V, TA=100°C 50 IEBO VEB=4.0V 50 BVCBO IC=100μA 180 BVCEO IC=1.0m A 160 BVEBO IE=10μA 6.0 VCE(SAT) IC=10m A, IB=1.0m A 0.15 VCE(SAT) IC=50m A, IB=5.0m A 0.20 VBE(SAT) IC=10m A, IB=1.0m A 1.00 VBE(SAT) IC=50m A, IB=5.0m A 1.00 h FE VCE=5.0V, IC=1.0m A 80 h FE VCE=5.0V, IC=10m A 80 250 h FE VCE=5.0V, IC=50m A 30 f T VCE=10V, IC=10m A, f=100MHz 100 300 Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm2 UNITS n A μA n A V V V V V V V MHz R2 (19-February 2010) Datasheet pdf - http://..net/ .Data Sheet.co.kr CTLT5551-M832D SURFACE MOUNT DUAL, HIGH VOLTAGE GENERAL PURPOSE NPN SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: SYMBOL Cob Cib hfe NF TEST CONDITIONS...