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MJE13009 - SILICON NPN TRANSISTORS

Download the MJE13009 datasheet PDF. This datasheet also covers the MJE13008 variant, as both devices belong to the same silicon npn transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The CENTRAL SEMICONDUCTOR MJE13008 and MJE13009 are silicon NPN transistors designed for high voltage, high speed switching applications.

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Note: The manufacturer provides a single datasheet file (MJE13008-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Central Semiconductor

Part Number Description
MJE13003 SILICON NPN POWER TRANSISTOR
MJE13004 NPN SILICON POWER TRANSISTOR
MJE13005 NPN SILICON POWER TRANSISTOR
MJE13005 NPN SILICON POWER TRANSISTOR
MJE13008 SILICON NPN TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJE13008 MJE13009 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE13008 and MJE13009 are silicon NPN transistors designed for high voltage, high speed switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCEO VCEV VEBO IC ICM IB PD TJ, Tstg ΘJC MJE13008 MJE13009 300 400 600 700 9.0 12 24 6.0 100 -65 to +150 1.25 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV VCE=Rated VCEV, VBE(OFF)=1.