MJE13009 Datasheet | onsemi

Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009 is designed for high- voltage, high- speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. Features http://onsemi. - VCEO(sus) 400 V and 300 V - Reverse Bias SOA with Inductive Loads @ TC = 100_C - Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C tc @ 8 A, - 700 V Blocking Capability - SOA and Switching Applications Information - Pb- Free Package is Available- MAXIMUM RATINGS Rating Collector- Emitter Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current Base Current Emitter Current - Continuous - Peak (Note 1) - Continuous - Peak (Note 1) - Continuous - Peak (Note 1) Symbol VCEO(sus) VCEV VEBO IC ICM IB IBM IE IEM PD PD TJ, Tstg Value 400 700 9 12 24 6 12 18 36 2 16 100 800 - 65 to +150 Unit Vdc Vdc Vdc Adc Adc Adc 12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS - 100 WATTS 100_C is 120 ns (Typ) TO- 220AB CASE 221A- 09 STYLE 1 3 MARKING DIAGRAM MJE13009G W W/_C W W/_C _C A Y WW G = Assembly Location = Year = Work Week = Pb- Free Package AY WW Total Device Dissipation @ TC = 25_C Derate above 25°C Total Device Dissipation @ TC = 25_C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction- to- Ambient Thermal Resistance, Junction- to- Case Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds Symbol Rq JA Rq JC TL Max 62.5 1.25 275 Unit _C/W _C/W _C Device MJE13009 ORDERING INFORMATION Package TO- 220 TO- 220 (Pb- Free) Shipping 50 Units / Rail 50 Units /...