MJE13009G - NPN Silicon Power Transistors

onsemi

Key Features

VCEO(sus) 400 V and 300 V.
Reverse Bias SOA with Inductive Loads @ TC = 100_C.
Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C tc @ 8 A, 100_C is 120 ns (Typ).
700 V Blocking Capability.
SOA and Switching.

MJE13009G npn silicon power transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	MJE13009G
Manufacturer	onsemi
File Size	270.04 KB
Description	NPN Silicon Power Transistors
Datasheet	MJE13009G Datasheet

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Full PDF Text Transcription (Reference)

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MJE13009G SWITCHMODE Series NPN Silicon Power Transistors The MJE13009G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.