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MPSH11 - NPN RF TRANSISTORS

Download the MPSH11 datasheet PDF. This datasheet also covers the MPSH10 variant, as both devices belong to the same npn rf transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The CENTRAL SEMICONDUCTOR MPSH10 and MPSH11 are silicon NPN RF transistors manufactured by the epitaxial planar process and designed for low noise UHF/VHF amplifier and high output oscillator applications.

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Note: The manufacturer provides a single datasheet file (MPSH10-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MPSH11 (MPSH10 / MPSH11) VHF/UHF Transistors Motorola
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MPSH10 (MPSH10 / MPSH11) VHF/UHF Transistors Motorola
MPSH10 NPN RF Transistor Fairchild Semiconductor

Other Datasheets by Central Semiconductor

Part Number Description
MPSH10 NPN RF TRANSISTORS
MPSH81 PNP SILICON RF TRANSISTOR
MPS3392 SILICON NPN TRANSISTORS
MPS3393 SILICON NPN TRANSISTORS
MPS3394 SILICON NPN TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MPSH10 MPSH11 SILICON NPN RF TRANSISTORS TO-92 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSH10 and MPSH11 are silicon NPN RF transistors manufactured by the epitaxial planar process and designed for low noise UHF/VHF amplifier and high output oscillator applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO PD TJ, Tstg ΘJA 30 25 3.0 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=25V IEBO VEB=2.0V BVCBO IC=100μA 30 BVCEO IC=1.0mA 25 BVEBO IE=10μA 3.0 VCE(SAT) IC=4.0mA, IB=0.