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MPSH10
Preferred Device
VHF/UHF Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO PD PD TJ, Tstg Value 25 30 3.0 350 2.8 1.0 8.0 −55 to +150 Unit Vdc Vdc Vdc W mW/°C W mW/°C °C
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COLLECTOR 3 1 BASE 2 EMITTER
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200357 125 Unit °C/W °C/W
1
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2
3
TO−92 CASE 29−11 STYLE 2
Stresses exceeding Maximum Ratings may damage the device.