D40C7 Overview
Description
The CENTRAL SEMICONDUCTOR D40C7 type is an NPN silicon Darlington power transistor designed for general purpose amplifier applications where high gain is required. MARKING: FULL PART NUMBER TO-202 CASE SYMBOL VCES VCEO VEBO IC ICM PD TJ, Tstg ΘJC 50 50 13 0.5 1.0 6.25 -55 to +150 20 SYMBOL TEST CONDITIONS MIN TYP ICES VCE=50V ICBO VCE=50V, TC=150°C IEBO VEB=13V BVCEO lC=10mA 50 VCE(SAT) lC=500mA, IB=0.5mA VBE(SAT) lC=500mA, IB=0.5mA hFE VCE=5.0V, IC=200mA 10K fT VCE=5.0V, lC=20mA 80 Ccb VCB=10V, f=1.0MHz ton lC=1.0A, IB1=1.0mA 120 toff lC=1.0A, IB1=IB2=1.0mA 1200 MAX 500 20 100 1.5 2.0 70K 10 UNITS V V V A A W °C °C/W UNITS nA μA nA V V V MHz pF ns ns R2 (23-January 2012) D40C7 NPN SILICON DARLINGTON POWER TRANSISTOR TO-202 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector Tab is common to pin 3 MARKING: FULL PART NUMBER w w w.
