D40C7 Datasheet and Specifications PDF

The D40C7 is a NPN SILICON DARLINGTON POWER TRANSISTOR.

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Part NumberD40C7 Datasheet
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR D40C7 type is an NPN silicon Darlington power transistor designed for general purpose amplifier applications where high gain is required. MARKING: FULL PART NUMBER TO-202 C. 0 100 1.5 2.0 70K 10 UNITS V V V A A W °C °C/W UNITS nA μA nA V V V MHz pF ns ns R2 (23-January 2012) D40C7 NPN SILICON DARLINGTON POWER TRANSISTOR TO-202 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector Tab is common to pin 3 MARKING: FULL PART NUMBER w w w. c e n t r a l s .
Part NumberD40C7 Datasheet
DescriptionNPN POWER DARLINGTON TRANSISTORS
ManufacturerGE
Overview VERY HIGH GAIN NPN POWER DARLINGTON TRANSISTORS D40C Series 30-50 VOLTS .5 AMP, 6.25 WATTS Designed for driver, regulator, touch switch, I.e. driver, audio output, relay substitute, oscillator, serv.
* hFE Min. - 10,000 and 40,000
* 1.33 Watt power dissipation at TA = 25° NPN COLLECTOR EMITTER CASE STYLE TO-202 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0.48(}-0.520 (12.192-13.208) 0.128-0.132 (3.251-3.353) 0.285-0.315 (7.237-8.001) 1.21 REF. (30.734) 0.405-0.425 (10.287-10.795) 0.065-0.07.
Part NumberD40C7 Datasheet
DescriptionSilicon NPN Transistor
ManufacturerNTE Electronics
Overview D40C7 Silicon NPN Transistor Darlington Power Amplifier TO−202 Type Package Features: D Forward Current Transfer Ratio: hFE = 10,000 Min D Power Dissipation: 1.33W Free−Air @ TA = +50C D Hard Solder . D Forward Current Transfer Ratio: hFE = 10,000 Min D Power Dissipation: 1.33W Free
*Air @ TA = +50C D Hard Solder Mountdown Applications: D Driver, IC Driver D Regulator D Touch Switch D Audio Output D Relay Substitute D Oscillator D Servo
*Amplifier D Capacitor Multiplier Absolute Maximum Ratings: .
Part NumberD40C7 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·High DC Current Gain- : hFE = 10K-70K ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 50V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·. cified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA ,IB= 0.5mA VBE(sat) Base-Emitter Saturation Voltage IC= 500mA ,IB= 0.5mA ICBO Collector Cutoff Current VCB=50V, IE= 0 IEBO Emitter Cut.