Chino-Excel Technology CEBF640
N-Channel Enhancement Mode Field Effect Transistor
| Part No. | CEBF640 |
|---|---|
| Datasheet | CEBF640 Download |
| Manufacturer |  Chino-Excel Technology |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Type CEPF640 CEBF640 CEFF640 VDSS 200V 200V 200V RDS(ON) 0.15Ω 0.15Ω 0.15Ω ID 19A 19A 19A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-220F full-pak for through hole. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F SABSOLUTE MAXIMUM RATINGS
Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 200 ±20 19 76 125 1.0 19 d 76 d 40 0.32 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.
