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CED01N7 - N-Channel MOSFET

This page provides the datasheet information for the CED01N7, a member of the CED01N7_Chino N-Channel MOSFET family.

Datasheet Summary

Features

  • 700V, 0.8A, RDS(ON) = 18 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED01N7/CEU01N7 D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S.

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Datasheet Details

Part number CED01N7
Manufacturer Chino-Excel Technology
File Size 440.32 KB
Description N-Channel MOSFET
Datasheet download datasheet CED01N7 Datasheet
Additional preview pages of the CED01N7 datasheet.

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Full PDF Text Transcription

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 0.8A, RDS(ON) = 18 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED01N7/CEU01N7 D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 700 Units V V A A W W/ C C ±30 0.8 3.0 31 0.
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