CED40N10 Datasheet | Chino-Excel Technology

FEATURES 100V, 37A, RDS(ON) = 32mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED40N10/CEU40N10 D G S CEU SERIES TO-252(D-PAK) S CED SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 100 Units V V A A W W/ C C ±20 37 148 93.8 0.75 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.6 50 Units C/W C/W .. Details are subject to change without notice . 1 Rev 1. 2009.Nov. http://.cetsemi. CED40N10/CEU40N10 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 20A VDS = 80V, ID = 37A, VGS = 10V VDD = 50V, ID = 37A, VGS = 10V, RGEN = 25Ω 35 30 138 29 50.8 12 19 37 1.5 70 60 276 58 67.5 ns ns ns ns n C n C n C A V VGS(th) RDS(on) g FS Ciss Coss Crss VGS = VDS, ID = 250µA VGS = 10V, ID = 20A 2 26 4 32 V mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 100V, VGS = 0V VGS = 25V, VDS = 0V VGS = -25V, VDS = 0V 100 1 100 -100 V µA Tc = 25 C unless otherwise noted Symbol Test...