CED630N Datasheet | Chino-Excel Technology

FEATURES 200V, 7.5A, RDS(ON) = 0.36Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED630N/CEU630N D G S CEU SERIES TO-252(D-PAK) S CED SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 200 Units V V A A W W/ C C ±20 7.5 30 54 0.43 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.3 50 Units C/W C/W .. Details are subject to change without notice . 1 Rev 2. 2009.March http://.cetsemi. CED630N/CEU630N Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 7.5A VDS = 160V, ID = 5.9A, VGS = 10V VDD = 100V, ID = 5A, VGS = 10V,RGEN = 50Ω 24 15 116 25 19 3 5 7.5 1.5 48 30 232 50 24.7 ns ns ns ns n C n C n C A V g FS Ciss Coss Crss VDS = 10V, ID = 3.5A VDS = 25V, VGS = 0V, f = 1.0 MHz 4 930 130 25 S p F p F p F VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 3.5A 2 0.30 4 0.36 V Ω BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 160V, VGS = 0V VGS = 20V, VDS = 0V VGS =...