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CED630N - N-Channel MOSFET

This page provides the datasheet information for the CED630N, a member of the CED630N_Chino N-Channel MOSFET family.

Datasheet Summary

Features

  • 200V, 7.5A, RDS(ON) = 0.36Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED630N/CEU630N D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S.

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Datasheet preview – CED630N

Datasheet Details

Part number CED630N
Manufacturer Chino-Excel Technology
File Size 418.00 KB
Description N-Channel MOSFET
Datasheet download datasheet CED630N Datasheet
Additional preview pages of the CED630N datasheet.

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Full PDF Text Transcription

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 7.5A, RDS(ON) = 0.36Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED630N/CEU630N D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 200 Units V V A A W W/ C C ±20 7.5 30 54 0.
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