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CED830G - N-Channel MOSFET

This page provides the datasheet information for the CED830G, a member of the CED830G_Chino N-Channel MOSFET family.

Datasheet Summary

Features

  • 500V, 4.5A, RDS(ON) = 1.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED830G/CEU830G.

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Datasheet Details

Part number CED830G
Manufacturer Chino-Excel Technology
File Size 417.21 KB
Description N-Channel MOSFET
Datasheet download datasheet CED830G Datasheet
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Full PDF Text Transcription

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 500V, 4.5A, RDS(ON) = 1.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED830G/CEU830G PRELIMINARY D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 500 Units V V A A W W/ C C ±30 4.5 18 68 0.
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