CED830G - N-Channel MOSFET

Chino-Excel Technology

Download the CED830G datasheet PDF. This datasheet also covers the CED830G_Chino variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

500V, 4.5A, RDS(ON) = 1.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED830G/CEU830G.

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CED830G n-channel mosfet by Chino-Excel Technology - Datasheet Preview — Note: The manufacturer provides a single datasheet file (CED830G_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	CED830G
Manufacturer	Chino-Excel Technology
File Size	417.21 KB
Description	N-Channel MOSFET
Datasheet	CED830G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

N-Channel Enhancement Mode Field Effect Transistor FEATURES 500V, 4.5A, RDS(ON) = 1.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED830G/CEU830G PRELIMINARY D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 500 Units V V A A W W/ C C ±30 4.5 18 68 0.