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CEDF640 - N-Channel MOSFET

This page provides the datasheet information for the CEDF640, a member of the CEDF640_Chino N-Channel MOSFET family.

Datasheet Summary

Features

  • 200V, 15A, RDS(ON) = 0.15 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S.

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Datasheet preview – CEDF640

Datasheet Details

Part number CEDF640
Manufacturer Chino-Excel Technology
File Size 365.56 KB
Description N-Channel MOSFET
Datasheet download datasheet CEDF640 Datasheet
Additional preview pages of the CEDF640 datasheet.

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Full PDF Text Transcription

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CEDF640/CEUF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 15A, RDS(ON) = 0.15 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 200 ±20 15 60 83 0.
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