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CEF09N6 - N-Channel MOSFET

Download the CEF09N6 datasheet PDF. This datasheet also covers the CEF09N6_Chino variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 600V , 6A ,RDS(ON)= 1.2 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole. D 6 G G D S TO-220F S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEF09N6_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEF09N6
Manufacturer Chino-Excel Technology
File Size 45.43 KB
Description N-Channel MOSFET
Datasheet download datasheet CEF09N6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CEF09N6 Jul. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 6A ,RDS(ON)= 1.2 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole. D 6 G G D S TO-220F S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 600 Unit V V A A A W W/ C C Ć30 5 15 5 50 0.38 -55 to 150 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RįJC RįJA 6-127 2.