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CEM4600 - Dual MOSFET

Download the CEM4600 datasheet PDF. This datasheet also covers the CEM4600-Chino variant, as both devices belong to the same dual mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • 30V, 7.3A, RDS(ON) = 18mΩ (typ) @VGS = 10V. RDS(ON) = 26mΩ (typ) @VGS = 4.5V. -30V, -4.6A, RDS(ON) = 45mΩ (typ) @VGS = -10V. RDS(ON) = 72mΩ (typ) @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEM4600-Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEM4600
Manufacturer Chino-Excel Technology
File Size 138.13 KB
Description Dual MOSFET
Datasheet download datasheet CEM4600 Datasheet

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Other Datasheets by Chino-Excel Technology

Part Number Description
CEM4042 N-Channel Enhancement Mode Field Effect Transistor
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Full PDF Text Transcription

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CEM4600 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V, 7.3A, RDS(ON) = 18mΩ (typ) @VGS = 10V. RDS(ON) = 26mΩ (typ) @VGS = 4.5V. -30V, -4.6A, RDS(ON) = 45mΩ (typ) @VGS = -10V. RDS(ON) = 72mΩ (typ) @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 30 P-Channel -30 Units V V A A W C ±20 7.3 30 2.0 -55 to 150 ±20 -4.
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