Datasheet4U Logo Datasheet4U.com

CEM8938 - Dual MOSFET

This page provides the datasheet information for the CEM8938, a member of the CEM8938-Chino Dual MOSFET family.

Datasheet Summary

Features

  • 30V, 7A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. -30V, -6A, RDS(ON) = 38mΩ @VGS = -10V. RDS(ON) = 57mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 D1 8 D1 7 D2 6 D2 5 1 S1 2 G1 3 S2 4 G2.

📥 Download Datasheet

Datasheet preview – CEM8938

Datasheet Details

Part number CEM8938
Manufacturer Chino-Excel Technology
File Size 140.32 KB
Description Dual MOSFET
Datasheet download datasheet CEM8938 Datasheet
Additional preview pages of the CEM8938 datasheet.
Other Datasheets by Chino-Excel Technology

Full PDF Text Transcription

Click to expand full text
CEM8938 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V, 7A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. -30V, -6A, RDS(ON) = 38mΩ @VGS = -10V. RDS(ON) = 57mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 D1 8 D1 7 D2 6 D2 5 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 30 P-Channel -30 Units V V A A W C ±20 7 20 2.
Published: |