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CES2331 - P-Channel MOSFET

Download the CES2331 datasheet PDF. This datasheet also covers the CES2331_Chino variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • -20V, -4.2A, RDS(ON) = 48mΩ @VGS = -4.5V. RDS(ON) = 60mΩ @VGS = -2.5V. RDS(ON) = 78mΩ @VGS = -1.8V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. G S G SOT-23 CES2331 D D S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CES2331_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CES2331
Manufacturer Chino-Excel Technology
File Size 414.19 KB
Description P-Channel MOSFET
Datasheet download datasheet CES2331 Datasheet

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Other Datasheets by Chino-Excel Technology

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -4.2A, RDS(ON) = 48mΩ @VGS = -4.5V. RDS(ON) = 60mΩ @VGS = -2.5V. RDS(ON) = 78mΩ @VGS = -1.8V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. G S G SOT-23 CES2331 D D S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -20 Units V V A A W C ±12 -4.2 -15 1.25 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units C/W www.DataSheet4U.