CES2331
Overview
P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -4.2A, RDS(ON) = 48mΩ @VGS = -4.5V. RDS(ON) = 60mΩ @VGS = -2.5V. RDS(ON) = 78mΩ @VGS = -1.8V. High dense cell design for extremely low...
| Part | CES2331 |
|---|---|
| Description | P-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Chino-Excel Technology |
| Size | 414.19 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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