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CES2336 - N-Channel MOSFET

Download the CES2336 datasheet PDF. This datasheet also covers the CES2336_Chino variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 60V, 1.8A, RDS(ON) = 250mΩ @VGS = 10V. RDS(ON) = 330mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. CES2336.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CES2336_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CES2336
Manufacturer Chino-Excel Technology
File Size 445.83 KB
Description N-Channel MOSFET
Datasheet download datasheet CES2336 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 1.8A, RDS(ON) = 250mΩ @VGS = 10V. RDS(ON) = 330mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. CES2336 PRELIMINARY D G D G SOT-23 S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 60 Units V V A A W C ±20 1.8 7.2 1.25 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units C/W www.DataSheet4U.