Datasheet Summary
N-Channel Enhancement Mode Field Effect Transistor Features
60V, 1.8A, RDS(ON) = 250mΩ @VGS = 10V. RDS(ON) = 330mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package.
PRELIMINARY
D G SOT-23...
