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CET3055 - N-Channel Enhancement Mode Field Effect Transistor

Download the CET3055 datasheet PDF. This datasheet also covers the CET3055_Chino variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 60V, 4.0A, RDS(ON) = 100mΩ @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D DS D G SOT-223 DS G SOT-223 (J23Z) G S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CET3055_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CET3055
Manufacturer Chino-Excel Technology
File Size 60.44 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CET3055 Datasheet

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Other Datasheets by Chino-Excel Technology

Part Number Description
CET3055L N-Channel Enhancement Mode Field Effect Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CET3055 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4.0A, RDS(ON) = 100mΩ @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D DS D G SOT-223 DS G SOT-223 (J23Z) G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 60 VGS ±20 ID 4.0 IDM 25 Maximum Power Dissipation PD 3 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 42 Units V V A A W C Units C/W 1998.March http://www.cetsemi.