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CET3055L - N-Channel Enhancement Mode Field Effect Transistor

Download the CET3055L datasheet PDF. This datasheet also covers the CET3055L_Chino variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 60V, 4A, RDS(ON) = 85mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D DS D G SOT-223 G S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CET3055L_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CET3055L
Manufacturer Chino-Excel Technology
File Size 363.21 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CET3055L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CET3055L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4A, RDS(ON) = 85mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D DS D G SOT-223 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 4 IDM 16 Maximum Power Dissipation PD 3 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 42 Units V V A A W C Units C/W 2009.July 7 - 34 http://www.cetsemi.