CET4401B Description
P-Channel Enhancement Mode Field Effect Transistor.
CET4401B Key Features
- 40V, -4.9A, RDS(ON) = 57mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). R
- Part: CET4401B
- Manufacturer: Chino-Excel Technology
- Size: 392.12 KB
Related Chino-Excel Technology Datasheets
| Part Number | Description |
|---|---|
| CET4435A | P-Channel MOSFET |
| CET4301 | P-Channel MOSFET |
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| CET453N | N-Channel Enhancement Mode Field Effect Transistor |
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