CET4401B Overview
P-Channel Enhancement Mode Field Effect Transistor.
CET4401B Key Features
- 40V, -4.9A, RDS(ON) = 57mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). R
CET4401B datasheet by Chino-Excel Technology.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | CET4401B |
|---|---|
| Datasheet | CET4401B CET4401B_Chino Datasheet (PDF) |
| File Size | 392.12 KB |
| Manufacturer | Chino-Excel Technology |
| Description | P-Channel MOSFET |
|
|
|
P-Channel Enhancement Mode Field Effect Transistor.
View all Chino-Excel Technology datasheets
| Part Number | Description |
|---|---|
| CET4435A | P-Channel MOSFET |
| CET4301 | P-Channel MOSFET |
| CET451AN | N-Channel Enhancement Mode Field Effect Transistor |
| CET453N | N-Channel Enhancement Mode Field Effect Transistor |
| CET04N10 | N-Channel MOSFET |
| CET3055 | N-Channel Enhancement Mode Field Effect Transistor |
| CET3055L | N-Channel Enhancement Mode Field Effect Transistor |
| CET3252 | N-Channel MOSFET |
| CET6426 | N-Channel MOSFET |
| CET6861 | P-Channel MOSFET |