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CET451AN
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 7.2A, RDS(ON) = 35mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package.
D
DS D
G
SOT-223
DS G
SOT-223 (J23Z)
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS 30
VGS ±20
ID 7.2 IDM 25
Maximum Power Dissipation
PD 3
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 42
Units V V A A W C
Units C/W
1998.March
7 - 46
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CET451AN Datasheet
