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CET451AN - N-Channel Enhancement Mode Field Effect Transistor

Download the CET451AN datasheet PDF. This datasheet also covers the CET451AN_Chino variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 30V, 7.2A, RDS(ON) = 35mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D DS D G SOT-223 DS G SOT-223 (J23Z) G S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CET451AN_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CET451AN
Manufacturer Chino-Excel Technology
File Size 60.44 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CET451AN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CET451AN N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 7.2A, RDS(ON) = 35mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D DS D G SOT-223 DS G SOT-223 (J23Z) G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 30 VGS ±20 ID 7.2 IDM 25 Maximum Power Dissipation PD 3 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 42 Units V V A A W C Units C/W 1998.March 7 - 46 http://www.cetsemi.