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CET4435A
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -8.8A, RDS(ON) = 24mΩ @VGS = -10V. RDS(ON) = 35mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D
D D G SOT-223
G
S
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -30 Units V V A A W C
±20
-8.8 -35 3 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 42 Units C/W
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Specification and data are subject to change without notice .
CET4435A Datasheet
