CET4435A Overview
CET4435A P-Channel Enhancement Mode Field Effect Transistor.
CET4435A Key Features
- 30V, -8.8A, RDS(ON) = 24mΩ @VGS = -10V. RDS(ON) = 35mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). R
CET4435A datasheet by Chino-Excel Technology.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | CET4435A |
|---|---|
| Datasheet | CET4435A CET4435A_Chino Datasheet (PDF) |
| File Size | 132.38 KB |
| Manufacturer | Chino-Excel Technology |
| Description | P-Channel MOSFET |
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CET4435A P-Channel Enhancement Mode Field Effect Transistor.
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