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CET6861 - P-Channel MOSFET

Download the CET6861 datasheet PDF. This datasheet also covers the CET6861_Chino variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • -60V, -3.5A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 170mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. CET6861 D D G SOT-223 D S G S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CET6861_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CET6861
Manufacturer Chino-Excel Technology
File Size 412.08 KB
Description P-Channel MOSFET
Datasheet download datasheet CET6861 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -3.5A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 170mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. CET6861 D D G SOT-223 D S G S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -60 Units V V A A W C ±20 -3.5 -14 3 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 42 Units C/W www.DataSheet4U.com Details are subject to change without notice . 1 Rev 2. 2007.