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CET9435A - P-Channel Enhancement Mode MOSFET

Download the CET9435A datasheet PDF. This datasheet also covers the CET9435A_Chino variant, as both devices belong to the same p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • -30V, -5.3A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-223 package. D DS D G SOT-223 G S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CET9435A_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CET9435A
Manufacturer Chino-Excel Technology
File Size 238.53 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet CET9435A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CET9435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5.3A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-223 package. D DS D G SOT-223 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID -5.3 IDM -20 Maximum Power Dissipation PD 2.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units V V A A W C Units C/W Details are subject to change without notice . 1 Rev 2. 2015.